A Study on Computational Efficiency for Parallel Semiconductor Device Simulation

In this paper, the Drift-Diffusion (DD), Schrödinger –Poisson transport (SP) and Density Gradient transport models (DG) are computed by parallel direct method and three different meshes. According to the results, the DD and DG model cannot be good approximation of SP model with respect to electron density simulation. In addition, a dense mesh is necessary for simulation of quantum effect. Therefore, parallel computing is an important technique of semiconductor devices. Generally, simulation with two and four processors is about 1.6 ~ 1.8 and 2.8 ~ 3 times faster than that with one processor, respectively. In the case of efficiency, 0.8 ~ 0.9 and 0.7 ~ 0.75 are obtained for two and four processors, respectively. Key-Words: Quantum effects, Drift-Diffusion model, Schrödinger equation, Density Gradient model, Numerical simulation, Parallel computing.